High-k dielectrics for future generation memory devices (Invited Paper)

被引：215

作者：

Kittl, J. A. ^{[1
]}

Opsomer, K. ^{[1
]}

Popovici, M. ^{[1
]}

Menou, N. ^{[1
]}

Kaczer, B. ^{[1
]}

Wang, X. P. ^{[1
]}

Adelmann, C. ^{[1
]}

Pawlak, M. A. ^{[1
]}

Tomida, K. ^{[1
]}

Rothschild, A. ^{[1
]}

Govoreanu, B. ^{[1
]}

Degraeve, R. ^{[1
]}

Schaekers, M. ^{[1
]}

Zahid, M. ^{[1
]}

Delabie, A. ^{[1
]}

Meersschaut, J. ^{[1
]}

Polspoel, W. ^{[1
]}

Clima, S. ^{[1
]}

Pourtois, G. ^{[1
]}

Knaepen, W. ^{[2
]}

Detavernier, C. ^{[2
]}

Afanas'ev, V. V. ^{[3
]}

Blomberg, T. ^{[4
]}

Pierreux, D. ^{[5
]}

Swerts, J. ^{[5
]}

Fischer, P. ^{[5
]}

Maes, J. W. ^{[5
]}

Manger, D. ^{[6
]}

Vandervorst, W. ^{[1
]}

Conard, T. ^{[1
]}

Franquet, A. ^{[1
]}

Favia, P. ^{[1
]}

Bender, H. ^{[1
]}

Brijs, B. ^{[1
]}

Van Elshocht, S. ^{[1
]}

Jurczak, M. ^{[1
]}

Van Houdt, J. ^{[1
]}

Wouters, D. J. ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

[3] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Leuven, Belgium

[4] ASM Microchem, Helsinki 00560, Finland

[5] ASM Belgium, B-3001 Leuven, Belgium

[6] Qimonda, B-3001 Leuven, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

High-k; DRAM; Flash; SrTiO3; ATOMIC LAYER DEPOSITION; KAPPA GATE DIELECTRICS; SRTIO3; THIN-FILMS; ELECTRICAL-PROPERTIES;

D O I：

10.1016/j.mee.2009.03.045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The requirements and development of high-k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory (DRAM) devices are reviewed. Dielectrics with k-value in the 9-30 range are studied as insulators between charge storage layers and control gates in flash devices. For this application, large band gaps (>6 eV) and band offsets are required, as well as low trap densities. Materials studied include aluminates and scandates. For DRAM metal-insulator-metal (MIM) capacitors, aggressive scaling of the equivalent oxide thickness (with targets down to 0.3 nm) drives the research towards dielectrics with k-values >50. Due to the high aspect ratio of MIMCap structures, highly conformal deposition techniques are needed, triggering a substantial effort to develop Atomic Layer Deposition (ALD) processes for the deposition of metal gates and high-k dielectrics. Materials studied include Sr- and Ba-based perovskites, with SrTiO3 as one of the most promising candidates, as well as tantalates, titanates and niobates. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1789 / 1795

页数：7

共 26 条

[21] Growth of SrTiO3 and BaTiO3 thin films by atomic layer deposition [J].