Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography

被引：9

作者：

Nguyen, KB

Cardinale, GF

Tichenor, DA

Kubiak, GD

Berger, K

RayChaudhuri, AK

Perras, Y

Haney, SJ

Nissen, R

Krenz, K

Stulen, RH

Fujioka, H

Hu, C

Bokor, J

Tennant, DM

Fetter, LA

机构：

[1] UNIV CALIF BERKELEY,BERKELEY,CA 94720

[2] AT&T BELL LABS,LUCENT TECHNOL,HOLMDEL,NJ 07733

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期

关键词：

D O I：

10.1116/1.588618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article reports results from the successful fabrication of metal-oxide-semiconductor (MOS) devices with extreme ultraviolet lithography. n-type MOS transistors with gate lengths of 0.1 mu m were fabricated and demonstrated good device characteristics. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported. (C) 1996 American Vacuum Society.

引用

页码：4188 / 4192

页数：5

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