Photothermal and photoacoustic characterization of porous silicon

被引:15
作者
Amato, G
Benedetto, G
Boarino, L
Brunetto, N
Spagnolo, R
机构
[1] Ist. Elettrotecn. Naz. Galileo F., 10135 Torino
关键词
photoacoustic and photothermal science and engineering; porous silicon; photoacoustics; photothermal; optical absorption; thermal conductivity; silicon sensors;
D O I
10.1117/1.601214
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Recently, porous silicon has been extensively studied due to its luminescence properties and some interesting features for micromechanical technology, characteristics that have led to a wide range of applications, from electro-optical devices to IR radiation detectors and gas sensors. It is therefore very important to obtain a complete description of this material, measuring its optical, electronic, and thermal properties. Following an introduction of the production process of porous silicon and its main physical and morphological characteristics, a review is presented of the possible applications of photothermal and photoacoustic techniques for the measurement of optical absorption and electronic and thermal transport properties. (C) 1997 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码:423 / 431
页数:9
相关论文
共 43 条
[1]   ANALYTICAL OPTOACOUSTIC SPECTROMETRY .3. OPTOACOUSTIC EFFECT AND THERMAL-DIFFUSIVITY [J].
ADAMS, MJ ;
KIRKBRIGHT, GF .
ANALYST, 1977, 102 (1213) :281-292
[2]   MODULATED PHOTOTHERMAL REFLECTANCE ON POROUS SILICON [J].
AMATO, G ;
BOARINO, L ;
BENEDETTO, G ;
SPAGNOLO, R .
THIN SOLID FILMS, 1995, 255 (1-2) :111-114
[3]   Porous silicon via freeze drying [J].
Amato, G ;
Brunetto, N .
MATERIALS LETTERS, 1996, 26 (06) :295-298
[4]   PHOTOACOUSTIC MEASUREMENTS OF DOPED SILICON-WAFERS [J].
AMATO, G ;
BENEDETTO, G ;
SPAGNOLO, R ;
TURNATURI, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 114 (02) :519-523
[5]   PHOTOACOUSTIC AND PHOTOTHERMAL DEFLECTION SPECTROSCOPY OF SEMICONDUCTORS [J].
AMATO, G ;
BENEDETTO, G ;
BOARINO, L ;
MARINGELLI, M ;
SPAGNOLO, R .
IEE PROCEEDINGS-A-SCIENCE MEASUREMENT AND TECHNOLOGY, 1992, 139 (04) :161-168
[6]  
AMATO G, IN PRESS NUOV CIMENT
[7]   ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].
ANDERSON, PW .
PHYSICAL REVIEW, 1958, 109 (05) :1492-1505
[8]  
[Anonymous], POROUS SILICON SCI T
[9]   PHOTOTHERMAL EXAMINATION OF BURIED LAYERS [J].
BAUMANN, J ;
TILGNER, R .
CANADIAN JOURNAL OF PHYSICS, 1986, 64 (09) :1291-1292
[10]  
BENEDETTO G, IN PRESS APPL PHYS A