Ferroelectric properties of an epitaxial lead zirconate titanate thin film deposited by a hydrothermal method below the Curie temperature

被引：49

作者：

Morita, T

Wagatsuma, Y

Cho, YS

Morioka, H

Funakubo, H

Setter, N

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[3] Swiss Fed Inst Technol, Mat Inst, Fac Engn, Ceram Lab, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 25期

关键词：

D O I：

10.1063/1.1762973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deposition of a hydrothermal method has a number of advantages; low deposition temperature, high-purity, deposition on a three-dimensional structure, and a large thickness. The present paper investigates the improvement of an epitaxial lead zirconate titanate (PZT) thin film deposited via hydrothermal synthesis. The critical parameter contributing to the film morphology was revealed to be the holding position of the reaction solution during deposition. In addition to this improvement, the SrRuO3 bottom electrode was confirmed to be able to withstand high alkali concentrations during the hydrothermal reaction. A hydrothermal synthesis time of 24 h yielded a PZT film with a thickness of 500 nm on SrRuO3/SrTiO3 (100) at 150 degreesC. The remanent polarization 2Pr and coercive electric field were 38.4 muC/cm(2) and 21.8 kV/cm, respectively. (C) 2004 American Institute of Physics.

引用

收藏

页码：5094 / 5096

页数：3

相关论文

共 15 条

[1] Hydrothermal synthesis of heteroepitaxial Pb(ZrxTi1-x)O-3 thin films at 90-150 degrees C [J].

Chien, AT ;

Speck, JS ;

Lange, FF .

JOURNAL OF MATERIALS RESEARCH, 1997, 12 (05) :1176-1178

[2] Growth and characterization of epitaxial ferroelectric PbZrxTi1-xO3 thin film capacitors with SrRuO3 electrodes for non-volatile memory applications [J].

Guerrero, C ;

Roldán, J ;

Ferrater, C ;

Garcia-Cuenca, MV ;

Sánchez, F ;

Varela, M .

SOLID-STATE ELECTRONICS, 2001, 45 (08) :1433-1440

[3] Estimation of resolution and contact force of a longitudinally vibrating touch probe sensor using lead zirconate titanate (PZT) thin-film vibrator [J].

Kanda, T ;

Morita, T ;

Kurosawa, MK ;

Higuchi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (5B) :3646-3651

[4] Crystallographic characterization of epitaxial Pb(Zr,Ti)O3 films with different Zr/Ti ratio grown by radio-frequency-magnetron sputtering [J].

Kanno, I ;

Kotera, H ;

Wasa, K ;

Matsunaga, T ;

Kamada, T ;

Takayama, R .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) :4091-4096

[5] Epitaxial growth of PbZr0.5Ti0.5O3 thin films on SrRuO3/SrTiO3 substrates using chemical solution deposition:: Microstructural and ferroelectric properties [J].

Kim, JH ;

Kim, Y ;

Chien, AT ;

Lange, FF .

JOURNAL OF MATERIALS RESEARCH, 2001, 16 (06) :1739-1744

[6] {100}-textured, piezoelectric Pb(Zrx Ti1-x)O3 thin films for MEMS:: integration, deposition and properties [J].

Ledermann, N ;

Muralt, P ;

Baborowski, J ;

Gentil, S ;

Mukati, K ;

Cantoni, M ;

Seifert, A ;

Setter, N .

SENSORS AND ACTUATORS A-PHYSICAL, 2003, 105 (02) :162-170

[7] Miniature piezoelectric motors [J].

Morita, T .

SENSORS AND ACTUATORS A-PHYSICAL, 2003, 103 (03) :291-300

[8] A cylindrical shaped micro ultrasonic motor utilizing PZT thin film (1.4 mm in diameter and 5.0 mm long stator transducer) [J].

Morita, T ;

Kurosawa, MK ;

Higuchi, T .

SENSORS AND ACTUATORS A-PHYSICAL, 2000, 83 (1-3) :225-230

[9] Single process to deposit lead zirconate titanate (PZT) thin film by a hydrothermal method [J].

Morita, T ;

Kanda, T ;

Yamagata, Y ;

Kurosawa, M ;

Higuchi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5B) :2998-2999

[10] A cylindrical micro ultrasonic motor using PZT thin film deposited by single process hydrothermal method (φ 2.4 mm, L = 10 mm stator transducer) [J].

Morita, T ;

Kurosawa, MK ;

Higuchi, T .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1998, 45 (05) :1178-1187