Electrical resistivity anisotropy in layered p-SnSe single crystals

被引：54

作者：

Agarwal, A ^{[1
]}

Vashi, MN

Lakshminarayana, D

Batra, NM

机构：

[1] S Gujarat Univ, Shree Jayendrapuri Arts & Sci Coll, Dept Phys, Bharuch 392002, Gujarat, India

[2] S Gujarat Univ, Shree Jayendrapuri Arts & Sci Coll, Dept Phys & Elect, Bharuch 392002, Gujarat, India

[3] Sardar Patel Univ, Dept Elect, Vallabh Vidyanagar 388120, Gujarat, India

[4] Sardar Patel Univ, Dept Mat Sci, Vallabh Vidyanagar 388120, Gujarat, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2000年 / 11卷 / 01期

关键词：

D O I：

10.1023/A:1008960305097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single crystals of p-type SnSe were grown by both direct vapor transport (DVT) and chemical vapor transport (CVT) techniques. The d.c. electrical resistivity anisotropy has been investigated for the first time in these layered crystals. The DVT grown crystals exhibited a large anisotropy ratio and also a higher activation energy compared to that of CVT grown crystals. The electron microscopic examination revealed the presence of a large concentration of stacking faults in the DVT grown crystals. The resistivity anisotropy is accordingly discussed in terms of stacking disorder.

引用

页码：67 / 71

页数：5

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