Effect of light induced degradation on electrical transport and charge extraction in polythiophene:Fullerene (P3HT:PCBM) solar cells

被引:41
作者
Khelifi, S. [1 ]
Voroshazi, E. [3 ]
Spoltore, D. [2 ]
Piersimoni, F. [2 ]
Bertho, S. [2 ]
Aernouts, T. [3 ]
Manca, J. [2 ]
Lauwaert, J. [4 ]
Vrielinck, H. [4 ]
Burgelman, M. [1 ]
机构
[1] Univ Ghent, Dept Elect & Informat Syst ELIS, B-9000 Ghent, Belgium
[2] Univ Hasselt, Inst Mat Res, B-3590 Diepenbeek, Belgium
[3] Imec, Organ Photovolta Polymer & Mol Elect, B-3001 Louvain, Belgium
[4] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium
关键词
Organic photovoltaics; P3HT:PCBM; Traps; Illumination aging; Characterization; Modeling; OPEN-CIRCUIT VOLTAGE; POLYMER; STABILITY; SPECTROSCOPY; LAYERS;
D O I
10.1016/j.solmat.2013.09.010
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We investigate the photodegradation in inert atmosphere of (poly 3-hexylthiophene:[6,6]-phenyl-C61-butyric acid methyl ester) (P3HT:PCBM) heterojunction solar cells under continuous illumination using advanced electrical characterization and a device modeling tool. Our results indicate that different failure mechanisms contribute to the performance loss. The first 250 h of illumination induced p-type doping and recombination related to traps in the blend which mainly decreases the short-circuit current and the efficiency of the cells. Device modeling and simulation allowed us to prove that increased p-type doping of the blend provoke the loss in the short-circuit current and the quantum efficiency by simultaneous reduction of charge carrier mobility and the electric field together with a shrink of the space charge region. Transmission electron microscopy (TEM) measurements reveal a change in the blend morphology upon long illumination times manifested by phase segregation in the blend. The reduction in the open-circuit voltage is reported to be related to a slight reduction of the charge transfer energy (CT) upon 700 h of illumination aging. The final failure mechanism was a rapid drop in the fill factor which occurs upon 1000 h of illumination and manifested by the appearance of an S-shape J-V characteristic. This failure mechanism is linked to the reduction of charge extraction caused by a reduced surface recombination velocity at the contacts. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:244 / 252
页数:9
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