Thin film deposition on plastic substrates using silicon nanoparticles and laser nanoforming

被引：12

作者：

Bet, S ^{[1
]}

Kar, A ^{[1
]}

机构：

[1] Univ Cent Florida, LAMMMP, Coll Opt & Photon, CREOL,Mech Mat & Aerosp Engn Dept MMAE, Orlando, FL 32816 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 130卷 / 1-3期

关键词：

nanocrystalline silicon; laser nanoforming; polycrystalline silicon; SEM; Raman spectroscopy;

D O I：

10.1016/j.mseb.2006.03.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reduced melting temperature of nanoparticles is utilized to deposit thin polycrystalline silicon (c-Si) films on plastic substrates by using a laser beam without damaging the substrate. An aqueous dispersion of 5 nm silicon nanoparticles was used as precursor. A Nd:YAG (1064 nm wavelength) laser operating in continuous wave (CW) mode was used for thin film formation. Polycrystalline Si films were deposited on flexible as well as rigid plastic substrates in both air and argon ambients. The films were analyzed by optical microscopy for film formation, scanning electron microscopy (SEM) for microstructural features, energy dispersive spectroscopy (EDS) for impurities, X-ray photoelectron spectroscopy (XPS) for composition and bond information of the recrystallized film and Raman spectroscopy for estimating shift from amorphous to more crystalline phase. Raman spectroscopy showed a shift from amorphous to more crystalline phases with increasing both the laser power and irradiation time during laser recrystallization step. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：228 / 236

页数：9

共 14 条

[1] Laser crystallized multicrystalline silicon thin films on glass [J].