Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry

被引：13

作者：

Corni, F ^{[1
]}

Calzolari, G ^{[1
]}

Gambetta, F ^{[1
]}

Nobili, C ^{[1
]}

Tonini, R ^{[1
]}

Zapparoli, M ^{[1
]}

机构：

[1] Univ Modena, INFM, Dipartimento Fis, I-41100 Modena, Italy

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 71卷

关键词：

radiation damage; vacancies; cavities; helium implantation; silicon;

D O I：

10.1016/S0921-5107(99)00376-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal desorption spectrometry (TDS) has been applied to investigate the thermal evolution of vacancy-like defects in helium-implanted (100) silicon samples with a dose of 2 x 10(16) cm(-2) at 20 keV. The measured spectra present features which can be interpreted as fingerprints of the modifications occurring in the sample. The defects that are recognized which affect the desorption are: thermally unstable helium-vacancy complexes, pressurized gas bubbles organized in planar structures (cracks) and thermally stable cavities. The attribution is supported by the results obtained by complementary techniques, such elastic recoil detection, channeling Rutherford backscattering spectrometry, cross sectional transmission electron microscopy and positron annihilation spectroscopy which have been employed on isothermally preannealed samples in the range 100-800 degrees C (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：207 / 212

页数：6

共 14 条

[1] He-implantation induced defects in Si studied by slow positron annihilation spectroscopy [J].

Brusa, RS ;

Karwasz, GP ;

Tiengo, N ;

Zecca, A ;

Corni, F ;

Calzolari, G ;

Nobili, C .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (04) :2390-2397

[2]

BRUSA RS, UNPUB PHYS REV B

[3] Efficiency and thermal stability of Pt gettering in crystalline Si [J].

Cacciato, A ;

Camalleri, CM ;

Franco, G ;

Raineri, V ;

Coffa, S .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (08) :4322-4327

[4] A FAST TECHNIQUE FOR THE QUANTITATIVE-ANALYSIS OF CHANNELING RBS SPECTRA [J].

CEROFOLINI, GF ;

CORNI, F ;

OTTAVIANI, G ;

TONINI, R .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 71 (04) :441-444

[5] Helium in silicon: Thermal-desorption investigation of bubble precursors [J].

Corni, F ;

Nobili, C ;

Ottaviani, G ;

Tonini, R ;

Calzolari, G ;

Cerofolini, GF ;

Queirolo, G .

PHYSICAL REVIEW B, 1997, 56 (12) :7331-7338

[6] Helium-implanted silicon: A study of bubble precursors [J].

Corni, F ;

Calzolari, G ;

Frabboni, S ;

Nobili, C ;

Ottaviani, G ;

Tonini, R ;

Cerofolini, GF ;

Leone, D ;

Servidori, M ;

Brusa, RS ;

Karwasz, GP ;

Tiengo, N ;

Zecca, A .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) :1401-1408

[7] Electronic stopping power of (100) axial-channelled He ions in Si crystals [J].

dosSantos, JHR ;

Grande, PL ;

Boudinov, H ;

Behar, M ;

Stoll, R ;

Klatt, C ;

Kalbitzer, S .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4) :51-54

[8]

Follstaedt D. M., 1996, J ELECT MAT, V25, P151

[9] HELIUM DESORPTION PERMEATION FROM BUBBLES IN SILICON - A NOVEL METHOD OF VOID PRODUCTION [J].

GRIFFIOEN, CC ;

EVANS, JH ;

DEJONG, PC ;

VANVEEN, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 27 (03) :417-420

[10] HELIUM AND HYDROGEN DECORATED CAVITIES IN SILICON [J].

HAKVOORT, RA ;

VANVEEN, A ;

MIJNARENDS, PE ;

SCHUT, H .

APPLIED SURFACE SCIENCE, 1995, 85 (1-4) :271-275

← 1 2 →