Spin injection into semiconductors, physics and experiments

被引：107

作者：

Schmidt, G ^{[1
]}

Molenkamp, LW ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2002年 / 17卷 / 04期

关键词：

D O I：

10.1088/0268-1242/17/4/304

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we review and extend our modelling of the physics governing electrical spin injection into non-magnetic semiconductors. A critical evaluation is given of several approaches to circumvent the impedance mismatch that prohibits spin injection in the diffusive transport regime, i.e. ballistic transport, the use of tunnel barriers and the physics of a Schottky contact. We conclude by discussing an experimental illustration of our modelling. In an all-electrical geometry, we utilize spin injection from a paramagnetic injector to demonstrate a novel magnetoresistance effect.

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页码：310 / 321

页数：12

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