High DC power 325 nm emission deep UV LEDs over sapphire

被引：12

作者：

Chitnis, A ^{[1
]}

Adivarahan, V ^{[1
]}

Zhang, JP ^{[1
]}

Wu, S ^{[1
]}

Sun, J ^{[1
]}

Pachipulusu, R ^{[1
]}

Mandavilli, V ^{[1
]}

Gaevski, M ^{[1
]}

Shatalov, M ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 25期

关键词：

D O I：

10.1049/el:20021100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Flip-chip 325 nm emission LEDs over sapphire with powers of 0.84 and 6.68 mW at 180 mA DC and 1 A pulsed pump currents are reported. A thermal management study shows the DC output power to be limited by the package heat dissipation.

引用

页码：1709 / 1711

页数：3

共 7 条

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Adivarahan, V ;

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[4]

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (08) :5083-5087

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