Laser-induced fluorescence detection and kinetics of SiH2 radicals in Ar/H2/SiH4 RF discharges

被引：29

作者：

Hertl, M ^{[1
]}

Jolly, J ^{[1
]}

机构：

[1] ONERA, CNRS, Unite Mixte Rech, Lab PRIAM, F-91761 Palaiseau, France

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2000年 / 33卷 / 04期

关键词：

D O I：

10.1088/0022-3727/33/4/311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laser-induced fluorescence spectroscopy is used to measure spatially- and time-resolved SiH2 radical densities in pure SiH4, H2/SiH4 and Ar/SiH4 radio-frequency glow discharges used for amorphous silicon thin film deposition. Absolute density calibration is obtained by a Rayleigh scattering experiment in pure nitrogen. Typical SiH2 densities on the plasma axis are 1-10×1016 m-3. Measurements of the SiH2 decay in the afterglow of argon/silane discharges are used to determine for the first time the SiH2 loss probability β on a-Si:H surfaces and to confirm the reaction rate coefficient of SiH2 with SiH4. We find β = 0.6±0.15 and kr = (2.3±0.5)×10-17 m3 s-1 molecule-1 at T = 500 K and p = 9 Pa. The measured SiH2 densities are compared to those calculated by a previously published two-dimensional plasma simulation code.

引用

页码：381 / 388

页数：8

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