Inhibitions of three dimensional island formation in InAs films grown on GaAs(111)A surface by molecular beam epitaxy

被引：111

作者：

Yamaguchi, H ^{[1
]}

Fahy, MR ^{[1
]}

Joyce, BA ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 06期

关键词：

D O I：

10.1063/1.117888

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparison has been made of the surface morphology of thin InAs films grown on GaAs (001) and (111)A substrates by molecular beam epitaxy using in situ reflection high energy electron diffraction and ex situ atomic force microscopy, InAs growth on (001) surface proceeds via the Stranski-Krastanov mechanism, with three-dimensional island formation beginning between one and two monolayers, but on the (111)A surface there is a two-dimensional made, independent of detailed growth conditions. This advantage accruing from the use of a novel index substrate provides the opportunity of fabricating a wide range of high quality heterostructures. (C) 1996 American Institute of Physics.

引用

页码：776 / 778

页数：3

共 22 条

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