SCANNING-TUNNELING-MICROSCOPY OF STEP BUNCHING ON VICINAL GAAS(100) ANNEALED AT HIGH-TEMPERATURES

被引：18

作者：

SKALA, SL ^{[1
]}

CHOU, ST ^{[1
]}

CHENG, KY ^{[1
]}

TUCKER, JR ^{[1
]}

LYDING, JW ^{[1
]}

机构：

[1] UNIV ILLINOIS,MICROELECTR LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.112236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Step bunching and terrace widening are observed with scanning tunneling microscopy on GaAs(100), tilted 2-degrees toward [110BAR] and [110], after annealing in ultrahigh vacuum at 600-degrees-C. The resulting surface consists of two separate phases, c(8X2) reconstructed terraces and a bunched step region that is either amorphous or (2X6) reconstructed. Average terrace widths increase to 2 or 4 times the nominal average terrace width for a 2-degrees miscut and steps are correspondingly compressed by 40% or 75% depending on the misorientation direction. The observed step bunching is explained by a thermodynamic instability against facetting resulting from a high step energy on c(8X2) reconstructed surfaces.

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页码：722 / 724

页数：3

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