Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

被引：4391

作者：

Waser, Rainer ^{[1
,2
,3
]}

Dittmann, Regina ^{[1
,2
]}

Staikov, Georgi ^{[1
,2
]}

Szot, Kristof ^{[1
,2
]}

机构：

[1] Julich Aachen Res Alliance, Sect Fundamentals Future Informat Technol JARA FI, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[3] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech 2, D-52056 Aachen, Germany

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 25-26期

关键词：

CURRENT-VOLTAGE CHARACTERISTICS; DC ELECTRICAL DEGRADATION; PEROVSKITE-TYPE TITANATES; THIN-FILM; NONVOLATILE MEMORY; DOPED SRTIO3; GRAIN-BOUNDARY; RESISTANCE; METAL; TRANSITION;

D O I：

10.1002/adma.200900375

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined.

引用

页码：2632 / +

页数：33

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