Resistive switching effect in metal/insulator/metal heterostructures and its application for non-volatile memory

被引：15

作者：

Akinaga, H.

Shima, H.

Takano, F.

Inoue, I. H.

Takagi, H.

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, AIST, Tsukuba, Ibaraki 3058568, Japan

[2] AIST, Correlated Electron Res Ctr, Tsukuba, Ibaraki 3058562, Japan

来源：

IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING | 2007年 / 2卷 / 04期

关键词：

resistive switch; nonvolatile memory; transition-metal oxide; semiconductor; interface;

D O I：

10.1002/tee.20189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents two types of resistive switching effects observed in metal/insulator/metal heterostructures: one is the forced-switch type, and the other is the memory-switch type. The former was observed in metal/semi-insulating GaAs hybrid structures. The nonlinear resistive switch showed a strong magnetic field dependence at room temperature. The latter, described in this report, appears in the Pt/Co oxide/Pt capacitor structures. The resistive switch showed bistability, which is certainly a phenomenon with great promise of application to nonvolatile solid state electronic memory. For both cases, the recent experimental evidences show that the electronic state of the interface between the metal electrode and the insulator plays a crucial role in the resistive switching effect. 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

引用

页码：453 / 457

页数：5

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