Non-alloyed ohmic contacts using MOCVD grown n+-InxGa1-xAs on n-GaAs

被引：3

作者：

Amin, FA

Rezazadeh, AA

Bland, SW

机构：

[1] Kings Coll London, Dept Elect Engn, Ctr Opt & Elect, London WC2R 2LS, England

[2] Epitaxial Prod Int Ltd, Cardiff CF3 0EG, S Glam, Wales

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 66卷 / 1-3期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1016/S0921-5107(99)00097-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The use of MOCVD grown n(+)-InxGa1 - xAs capping layer to produce a non-alloyed ohmic contact to GaAs-based devices is discussed. Very low specific contact resistance of 10(-7) Omega cm(2) was measured using conventional Ni/AuGe/Ni/Au metal contact system. A theoretical model for tunnelling through metal-semiconductor barriers using the WKB approximation was developed which indicates a good agreement with experimental data. HBTs fabricate using these InGaAs capping layers demonstrated very low emitter series resistance, up to four times smaller compared to similar HBT structures using GaAs capping layers. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：194 / 198

页数：5

共 14 条

[1]

BHATTACHARYA P, 1994, PROPERTIES INDIUM GA

[2] SPECIFIC RESISTIVITY OF OHMIC CONTACTS TO N-TYPE DIRECT BAND-GAP III-V COMPOUND SEMICONDUCTORS [J].