ELECTRICAL AND STRUCTURAL-PROPERTIES OF GEMOW OHMIC CONTACT TO AN IN0.5GA0.5AS CAP LAYER ON N-TYPE GAAS

被引：2

作者：

MERKEL, KG

BRIGHT, VM

SCHAUER, SN

CASAS, LM

WALCK, SD

机构：

[1] USA,RES LAB,ELECTR & POWER SOURCES DIRECTORATE,FT MONMOUTH,NJ 07703

[2] WRIGHT LAB,MAT DIRECTORATE WL MLBT,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 09期

关键词：

GAAS; GEMOW; INGAAS; OHMIC CONTACT; REFRACTORY METALS;

D O I：

10.1007/BF02655375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of electrical and structural characterization of a GeMoW ohmic contact to n-type GaAs with a 100angstrom thick, In0.5Ga0.5As cap layer are presented. Electrical characterization demonstrates ohmic behavior over a wide annealing temperature range from 300 to 700-degrees-C. A minimum contact resistance of 0.176 OMEGA-mm was measured after furnace annealing at 500-degrees-C. The contact resistance is also insensitive to anneal time at 500-degrees-C. Structural characterization using secondary ion mass spectroscopy, Auger electron spectroscopy, and x-ray diffraction indicates excess In as a potential cause of increased contact resistance following 700-degrees-C annealing.

引用

页码：991 / 996

页数：6

共 11 条

[1]

DUBONCHEVALLIER C, 1990, J ELECTROCHEM SOC, V137, P1524

[2] VERY LOW RESISTIVITY OHMIC CONTACT TO P-TYPE GAAS USING INXGA1-XAS INTERLAYER [J].