InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates using InP metamorphic buffer layer

被引：14

作者：

Kim, YM ^{[1
]}

Dahlstrom, M ^{[1
]}

Lee, S ^{[1
]}

Rodwell, MJW ^{[1
]}

Gossard, AC ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 10期

关键词：

metamorphic growth; heterojunction bipolar transistor; indium phosphide;

D O I：

10.1016/S0038-1101(02)00102-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors were grown on GaAs substrates. A 92 GHz powergain cutoff frequency f(max), and a 165 GHz current-gain cutoff frequency f(tau) were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BVCEO was 5 V while the DC current-gain beta was 27. In order to minimize the transistor operating junction temperature, high-thermal-conductivity InP metamorphic buffer layers were employed. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1541 / 1544

页数：4

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