GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS FOR VERY HIGH-PERFORMANCE ELECTRONIC-CIRCUITS

被引：33

作者：

ASBECK, PM ^{[1
]}

CHANG, FMC ^{[1
]}

WANG, KC ^{[1
]}

SULLIVAN, GJ ^{[1
]}

CHEUNG, DT ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

PROCEEDINGS OF THE IEEE | 1993年 / 81卷 / 12期

关键词：

D O I：

10.1109/5.248960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the principles and status of AlGaAs/GaAs heterojunction bipolar transistor technology. Comparisons of this technology with Si bipolar transistor and GaAs field-effect transistor technologies are made. Epitaxial materials, fabrication processes, transistor dc and RF characteristics, and modeling of AlGaAs/GaAs HBT's are described. Key areas of HBT application are also highlighted.

引用

页码：1709 / 1726

页数：18

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