Extremely high etch rates of in-based III-V semiconductors in Bcl(3)/N-2 based plasma

Extremely high etch rates of InGaP and InP are observed as N-2 is added to BCl3 discharges. The etch rates of similar to 2.0 mu m/min and -1.8 mu m/min for InGaP and InP, respectively, are achieved at 100 degrees C with 1000 W of electron cyclotron resonance power and -145 V self-bias. Optical emission spectra show increases of intensities for Cl-2(+) and Cl+ emissions with the presence of N-2 in BCl3 plasmas as well as an additional BN emission at 385.6 nm. This trend of increasing emission intensity is consistent with the increase of etching rate with BCl3/N-2 discharge. A low threshold current, 9.7 mA, InGaAs/GaAs/InGaP ridge lasers with a ridge width and cavity length of 1.4 and 750 mu m, respectively, were also demonstrated with this etching processing.