Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors

被引：17

作者：

Chakrabarti, S ^{[1
]}

Stiff-Roberts, AD

Bhattacharya, P

Kennerly, SW

机构：

[1] Univ Michigan, Solid State Elect Lab, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] USA, Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 03期

关键词：

D O I：

10.1116/1.1755709

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum dot infrared photodetectors (QDIPs) offer normal-incidence detection, low dark current, high operating temperature, and multi-wavelength detection. In an effort to get better responsivity in QDIPs at higher operating temperatures, we have grown, fabricated, and characterized two different QDIP heterostructures. The first is a device with 70 quantum dot layers. As a result, the peak responsivity is measured to be 0.12 A/W for V-bias = 2.0V and T = 175K. The second device has ten layers of InAs quantum dots embedded in an AlAs/GaAs superlattice. As a result of the subsequent large dot density and increased carrier confinement, the peak responsivity is measured to be 2.5 A/W for V-bias = -1.5 V and T = 78 K. (C) 2004 American Vacuum Society.

引用

页码：1499 / 1502

页数：4

共 13 条

[1] Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy [J].