Effects of rf bias and nitrogen flow rates on the reactive sputtering of TiAlN films

被引：57

作者：

Shew, BY

Huang, JL

Lii, DF

机构：

[1] Department of Materials Science and Engineering, National Cheng-Kung University, Tainan

[2] Department of Electrical Engineering, Chinese Naval Academy, Kaohsiung

来源：

THIN SOLID FILMS | 1997年 / 293卷 / 1-2期

关键词：

sputtering; nitrogen; titanium; aluminium;

D O I：

10.1016/S0040-6090(96)09038-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of r.f. bias and nitrogen flow on the microstructure and mechanical properties of TiAlN films were investigated. The preferred orientations, grain size, density, adhesive strength and hardness were substantially affected by substrate bias and nitrogen flow rate. The optimized wear resistance occurred 6 ml min(-1) higher than the critical N-2 flow rate at which a stoichiometric composition could be obtained. This could be related to different kinetics of nitridation of Ti and Al.

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收藏

页码：212 / 219

页数：8

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