Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks

被引：35

作者：

Narayanan, V. ^{[1
]}

Maitra, K.

Linder, B. P.

Paruchuri, V. K.

Gusev, E. R.

Jamison, P.

Frank, M. M.

Steen, A. L.

La Tulipe, D.

Arnold, J.

Carruthers, R.

Lacey, D. L.

Cartier, E.

机构：

[1] IBM Semicond Res & Dev Ctr, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[3] IBM Semicond Res & Dev Ctr, Syst & Technol Div, Hopewell Jct, NY 12533 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 07期

关键词：

chemical vapor deposition (CVD); electron mobility; hafnium oxide (HfO2); high-kappa dielectric; metal gate electrode; titanium nitride (TiN);

D O I：

10.1109/LED.2006.876312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of aggressively scaled (1.4 nm < T-inv < 2.1 nm) self-aligned HfO2-based nMOSFETs with various metal gate electrodes (W, TaN, TiN, and TaSiN) is optimized. It is shown that high mobility values, competitive with oxynitride controls (SiON/poly-Si, T-inv similar to 1.8-2.1 nm), can be achieved. Detailed studies of the role of interface states, remote charges in the HfO2 layer, interfacial layer regrowth, and nitrogen-induced charge lead to the conclusion that high-temperature-induced structural modifications near the SiO2/HfO2 interface substantially improve the electron mobility.

引用

页码：591 / 594

页数：4

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