Ultrafast electron and lattice dynamics in semiconductors at high excited carrier densities

被引:64
作者
Callan, JP
Kim, AMT
Huang, L
Mazur, E
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[2] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
基金
美国国家科学基金会;
关键词
D O I
10.1016/S0301-0104(99)00301-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We directly measure ultrafast changes in the dielectric function of GaAs over the spectral range from the near-IR to the near-UV caused by intense 70-fs laser excitation. The dielectric function reveals the nature of the ultrafast phase transformations generated in the material, including a semiconductor-to-metal transition for the strongest excitations. Although the electron and lattice dynamics are complex when large carrier densities are excited - between 1 and 20% of the valence electrons - the dominant processes and their timescales can be deduced. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:167 / 179
页数:13
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