Epitaxial growth of MgO films on Si(111) by metal organic chemical vapor deposition

被引：38

作者：

Sung, MM ^{[1
]}

Kim, C ^{[1
]}

Kim, CG ^{[1
]}

Kim, Y ^{[1
]}

机构：

[1] Korea Res Inst Chem Technol, Adv Mat Div, Thin Film Mat Lab, Taejon 305600, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 04期

关键词：

D O I：

10.1016/S0022-0248(99)00847-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial MgO films were grown on Si(1 1 1) substrates at 800 degrees C using methylmagnesium tert-butoxide ((MeMgOBu)-Bu-t) as a single precursor under high-vacuum conditions (5 x 10(-6) Torr). The crystalline structure, morphology, and chemical composition of the deposited films were investigated by X-ray diffraction, X-ray pole figure analysis, scanning electron microscopy, and X-ray photoelectron spectroscopy. The results show that epitaxial MgO films with correct stoichiometry can be deposited on Si(1 1 1) at 800 degrees C. The single precursor methylmagnesium tert-butoxide has been found suitable for the epitaxial growth of MgO on Si(1 1 1) substrates. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：651 / 654

页数：4

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