Microcrystalline silicon. Growth and device application

Processes used to grow hydrogenated microcrystalline silicon (muc-Si:H) from a H-2/SiH4-glow discharge plasma are explained in comparison to those for hydrogenated amorphous silicon (a-Si:H). Differences and similarities between muc-Si:H and a-Si:H-growth reactions in the plasma and on the film-growing surface are discussed, and the nucleus-formation process followed by epitaxial-like crystal growth process is illustrated as unique processes for the formulation of muc-Si:H. Determination of the effect of dangling-bond defect density on the propagation of the resulting muc-Si:H films is also discussed in parallel with the effect on a-Si:H in order to obtain a clue to improve opto-electronic properties of those materials for device applications especially for thin-film-silicon solar cells. Material issues to produce low cost and high efficiency solar cells are described, and finally recent progress in those issues is demonstrated. (C) 2004 Elsevier B.V. All rights reserved.