DEFECT FORMATION PROCESS DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON AT HIGH-TEMPERATURES

被引：15

作者：

GANGULY, G

MATSUDA, A

机构：

[1] Electrotechnical Laboratory, Tsukuba-shi Ibaraki, 305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 9A期

关键词：

HIGH TEMPERATURE GROWTH PROCESS; HYDROGENATED AMORPHOUS SILICON; PRECURSOR ASSISTED DEFECT SUPPRESSION; SURFACE HYDROGEN DESORPTION; SURFACE DIFFUSION LENGTH; PLASMA CVD;

D O I：

10.1143/JJAP.31.L1269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition rate dependence of the defect density at elevated substrate temperatures during the preparation of hydrogenated amorphous silicon reveals the importance of reactions of precursors on the growth surface. The concept of precursor assisted defect suppression is delineated and used to prepare materials with defect densities that are significantly lower than those available at present.

引用

页码：L1269 / L1271

页数：3

共 11 条

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