High Electron Mobility and Ambient Stability in Solution-Processed Perylene-Based Organic Field-Effect Transistors

被引：136

作者：

Piliego, Claudia ^{[1
,2
,3
]}

Jarzab, Dorota ^{[3
]}

Gigli, Giuseppe ^{[1
,2
]}

Chen, Zhihua ^{[4
]}

Facchetti, Antonio ^{[4
]}

Loi, Maria Antonietto ^{[3
]}

机构：

[1] INFM, CNR, NNL, Distretto Tecnol ISUFI, I-73100 Lecce, Italy

[2] Univ Salento, Dipartimento Ingn, I-73100 Lecce, Italy

[3] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[4] Polyera Corp, Skokie, IL 60077 USA

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 16期

关键词：

N-CHANNEL TRANSISTORS; THIN-FILM-TRANSISTOR; AMBIPOLAR TRANSPORT; SEMICONDUCTORS; OLIGOMERS; CIRCUITS;

D O I：

10.1002/adma.200803207

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Bottom-contact n-channel OFETs basedon spin-coated films of N,N'-1H,1H-perfluorobutyl dicyanoperylenediimide (PDI-FCN2) exhibit a saturation-regime mobility of 0.15 cm(2) V-1 s(-1) in vacuum and good air stability. These performances are attributed to the high crystallinity and to the edge-on orientation promoted by the thermal treatment, as showed by confocal laser microscopy.

引用

页码：1573 / +

页数：5

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