Atomistic modeling of the polarization of nitrogen centers in diamond due to growth surface orientation

被引:17
作者
Atumi, M. K. [1 ]
Goss, J. P. [1 ]
Briddon, P. R. [1 ]
Rayson, M. J. [2 ]
机构
[1] Newcastle Univ, Sch Elect & Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[2] Univ Surrey, Dept Chem, Guildford GU2 7XH, Surrey, England
来源
PHYSICAL REVIEW B | 2013年 / 88卷 / 24期
基金
英国工程与自然科学研究理事会;
关键词
MINIMUM ENERGY PATHS; ELASTIC BAND METHOD; PARAMAGNETIC-RESONANCE; SADDLE-POINTS; AB-INITIO; DEFECTS; HYDROGEN; LUMINESCENCE; AGGREGATION; IMPURITIES;
D O I
10.1103/PhysRevB.88.245301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond, as a consequence of its superlative intrinsic physical properties, is an attractive material for a wide range of applications. Recent developments have greatly enhanced the quality of gas-phase grown diamonds. It has been observed that some defects are grown into diamond preferentially aligned to specific orientations with respect to growth surface. Of particular note, the nitrogen-vacancy center is polarized in (110)-grown material. Preferential alignment of these defects in diamond may enhance their use in applications such as quantum information and encryption, and in diamond-based magnetometers. The origin of the preferential orientation with respect to the growth surface is not completely understood, and a mechanistic model is highly desirable in order that one might both optimize defect incorporation and better understand the growth of diamond in a wider sense. We present the results of quantum-chemical simulations that provide insight into the preferential alignment of nitrogen-related defects grown into different diamond surface orientations, showing that the sequence of structure surfaces required to produce polarization aligns with their energies.
引用
收藏
页数:13
相关论文
共 66 条
[21]   Optically active point defects in high quality single crystal diamond [J].
Goss, J. P. ;
Briddon, P. R. ;
Pinto, H. ;
Jones, R. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (09) :2049-2053
[22]   Vacancy-impurity complexes and limitations for implantation doping of diamond [J].
Goss, JP ;
Briddon, PR ;
Rayson, MJ ;
Sque, SJ ;
Jones, R .
PHYSICAL REVIEW B, 2005, 72 (03)
[23]   Deep hydrogen traps in heavily B-doped diamond [J].
Goss, JP ;
Briddon, PR ;
Jones, R ;
Teukam, Z ;
Ballutaud, D ;
Jomard, F ;
Chevallier, J ;
Bernard, M ;
Deneuville, A .
PHYSICAL REVIEW B, 2003, 68 (23)
[24]   Donor and acceptor states in diamond [J].
Goss, JP ;
Briddon, PR ;
Jones, R ;
Sque, S .
DIAMOND AND RELATED MATERIALS, 2004, 13 (4-8) :684-690
[25]   The vacancy-nitrogen-hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material [J].
Goss, JP ;
Briddon, PR ;
Jones, R ;
Sque, S .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (39) :S2903-S2911
[26]   The twelve-line 1.682eV luminescence center in diamond and the vacancy-silicon complex [J].
Goss, JP ;
Jones, R ;
Breuer, SJ ;
Briddon, PR ;
Oberg, S .
PHYSICAL REVIEW LETTERS, 1996, 77 (14) :3041-3044
[27]   PARAMAGNETIC-RESONANCE OF PHOTOEXCITED N-V DEFECTS IN DIAMOND .2. HYPERFINE INTERACTION WITH THE N-14 NUCLEUS [J].
HE, XF ;
MANSON, NB ;
FISK, PTH .
PHYSICAL REVIEW B, 1993, 47 (14) :8816-8822
[28]   Improved tangent estimate in the nudged elastic band method for finding minimum energy paths and saddle points [J].
Henkelman, G ;
Jónsson, H .
JOURNAL OF CHEMICAL PHYSICS, 2000, 113 (22) :9978-9985
[29]   A climbing image nudged elastic band method for finding saddle points and minimum energy paths [J].
Henkelman, G ;
Uberuaga, BP ;
Jónsson, H .
JOURNAL OF CHEMICAL PHYSICS, 2000, 113 (22) :9901-9904
[30]   Quantum Monte Carlo study of the optical and diffusive properties of the vacancy defect in diamond [J].
Hood, RQ ;
Kent, PRC ;
Needs, RJ ;
Briddon, PR .
PHYSICAL REVIEW LETTERS, 2003, 91 (07)