Novel electron-beam molecular resists with high resolution and high sensitivity for nanometer lithography

被引：71

作者：

Kadota, T

Kageyama, H

Wakaya, F

Gamo, K

Shirota, Y

机构：

[1] Osaka Univ, Fac Engn, Dept Appl Chem, Suita, Osaka 5650871, Japan

[2] Osaka Univ, Sch Engn Sci, Dept Elect & Mat Phys, Toyonaka, Osaka 5600043, Japan

来源：

CHEMISTRY LETTERS | 2004年 / 33卷 / 06期

关键词：

D O I：

10.1246/cl.2004.706

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel class of chemically-amplified, electron-beam molecular resists for nanometer lithography were created. These molecular resists functioned as positive resists in the presence of an acid generator, exhibiting a high sensitivity of approximate to2 muC cm(-2) and enabling the fabrication of approximate to25 nm line patterns.

引用

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页码：706 / 707

页数：2

相关论文

共 8 条

[1] Factors affecting photosensitivity enhancement of chemically amplified photoresists by an acid amplifier [J].

Arimitsu, K ;

Kudo, K ;

Ohmori, H ;

Ichimura, K .

JOURNAL OF MATERIALS CHEMISTRY, 2001, 11 (02) :295-301

[2] Photocrosslinking system based on a poly(vinyl phenol)/thermally degradable diepoxy crosslinker blend [J].

Okamura, H ;

Toda, S ;

Tsunooka, M ;

Shirai, M .

JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 2002, 40 (17) :3055-3062

[3]

Reichmanis E, 2001, MACROMOL SYMP, V175, P185, DOI 10.1002/1521-3900(200110)175:1<185::AID-MASY185>3.0.CO

[4]

2-H

[5] Photo-cross-linkable polymers having degradable properties on heating [J].

Shirai, M ;

Kawaue, A ;

Okamura, H ;

Tsunooka, M .

CHEMISTRY OF MATERIALS, 2003, 15 (21) :4075-4081

[6] Organic materials for electronic and optoelectronic devices [J].

Shirota, Y .

JOURNAL OF MATERIALS CHEMISTRY, 2000, 10 (01) :1-25

[7] APPROACHES TO THE DESIGN OF RADIATION-SENSITIVE POLYMERIC IMAGING-SYSTEMS WITH IMPROVED SENSITIVITY AND RESOLUTION [J].

WILLSON, CG ;

ITO, H ;

FRECHET, JMJ ;

TESSIER, TG ;

HOULIHAN, FM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) :181-187

[8] Novel class of low molecular-weight organic resists for nanometer lithography [J].

Yoshiwa, M ;

Kageyama, H ;

Shirota, Y ;

Wakaya, F ;

Gamo, K ;

Takai, M .

APPLIED PHYSICS LETTERS, 1996, 69 (17) :2605-2607