Mid-infrared photocurrent measurements on self-assembled Ge dots in Si

被引：32

作者：

Miesner, C ^{[1
]}

Röthig, O ^{[1
]}

Brunner, K ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICA E | 2000年 / 7卷 / 1-2期

关键词：

self-assembled quantum dots; intersubband photocurrent; quantum dot infrared photodetectors;

D O I：

10.1016/S1386-9477(99)00268-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on mid-infrared photocurrent spectroscopy of p-doped Ge quantum dots in Si. The Ge dots were fabricated by self-assembling in the Stranski-Krastanov growth mode using molecular beam epitaxy. Cross-sectional transmission electron microscopy reveals a lens-like dot shape with a lateral size of about 70 nm. Photocurrent is obtained between 200 meV (6.2 mu m) and 600 meV (2.1 mu m) in waveguide as well as normal incidence geometry for measurement temperatures up to 100 K. The strong high-energy tail is mainly attributed to intravalence band transitions from states bound in the Ge dots to continuum states. This is supported by the polarization dependence of the photocurrent as well as by interband photoluminescence. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：146 / 150

页数：5

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