Valence band offset at the CdS/CdTe interface

被引：14

作者：

Boieriu, P

Sporken, R

Sivananthan, S

机构：

[1] Univ Illinois, Dept Phys, Microphys Lab, Chicago, IL 60607 USA

[2] Fac Univ Notre Dame Paix, Lab Phys Mat Elect, B-5000 Namur, Belgium

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 04期

关键词：

D O I：

10.1116/1.1491989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wurtzite CdS was grown by molecular beam epitaxy on CdTe((1) over bar(1) over bar(1) over bar) B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe((1) over bar(1) over bar(1) over bar )B is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A. The valence band offset was measured by XPS and indicates a type-I alignment. (C) 2002 American Vacuum Society.

引用

收藏

页码：1777 / 1780

页数：4

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