MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE AND HGCDTE ON SI (100)

被引：96

作者：

SPORKEN, R

SIVANANTHAN, S

MAHAVADI, KK

MONFROY, G

BOUKERCHE, M

FAURIE, JP

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 18期

关键词：

D O I：

10.1063/1.102159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1879 / 1881

页数：3

共 14 条

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