Wurtzite CdS on CdTe grown by molecular beam epitaxy

被引:32
作者
Boieriu, P
Sporken, R
Xin, Y
Browning, ND
Sivananthan, S
机构
[1] Univ Illinois, Dept Phys, Chicago, IL 60607 USA
[2] Fac Univ Notre Dame Paix, Lab Interdisciplinaire Spect Elect, B-5000 Namur, Belgium
关键词
cadmium sulfide; Auger electron spectroscopy; XPS; SIMS; II-VI heterostructures; MBE;
D O I
10.1007/s11664-000-0212-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Growth of single crystal wurtzite cadmium sulfide on CdTe((111) over bar)B substrates has been achieved using molecular beam epitaxy. Reflection high-energy electron diffraction (RHEED) indicates smooth surface morphology for several hundreds of nanometers after nucleation. X-ray diffraction measurements confirm the crystalline orientation to be [0001] in the growth direction. X-ray photoelectron spectroscopy (XPS) indicates mostly stoichiometric CdS layers and the existence of a reaction at the interface. Sulfur incorporation into CdTe for various S fluxes has been investigated by Auger electron spectroscopy (AES). High-resolution TEM images of the interface between such epilayers were recorded. During the growth In was used as an in-situ dopant. The concentration and uniformity of In was determined by secondary ion mass spectrometry. Indium profiles were obtained for concentrations ranging from 5 x 10(17) to 1.4 x 10(21) cm(-3). The experimental concentration agrees well with the variation expected from the In flux.
引用
收藏
页码:718 / 722
页数:5
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