VALENCE-BAND OFFSET AND INTERFACE CHEMISTRY OF CDS/INP(110)

被引:40
作者
WILKE, WG [1 ]
SEEDORF, R [1 ]
HORN, K [1 ]
机构
[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-1000 BERLIN 12,FED REP GER
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期
关键词
D O I
10.1116/1.584605
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:807 / 814
页数:8
相关论文
共 39 条
[1]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[2]   MEAN-VALUE POINT IN BRILLOUIN ZONE [J].
BALDERESCHI, A .
PHYSICAL REVIEW B, 1973, 7 (12) :5212-5215
[3]   GE-GAAS(110) INTERFACE FORMATION [J].
BAUER, RS ;
MCMENAMIN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1444-1449
[4]   BAND OFFSETS IN TETRAHEDRAL SEMICONDUCTORS [J].
CARDONA, M ;
CHRISTENSEN, NE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1285-1289
[5]  
CARDONA M, 1965, PHYS REV A, V140, P633
[6]  
CHASSE T, 1989, SURF INTERFACE ANAL, V14
[7]   DIPOLE EFFECTS AND BAND OFFSETS AT SEMICONDUCTOR INTERFACES [J].
CHRISTENSEN, NE .
PHYSICAL REVIEW B, 1988, 37 (09) :4528-4538
[8]   EFFECT OF THE MADELUNG POTENTIAL ON SURFACE CORE-LEVEL SHIFTS IN GAAS [J].
DAVENPORT, JW ;
WATSON, RE ;
PERLMAN, ML ;
SHAM, TK .
SOLID STATE COMMUNICATIONS, 1981, 40 (11) :999-1002
[9]  
HAAK H, IN PRESS
[10]   TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES [J].
HARRISON, WA ;
TERSOFF, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1068-1073