Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes

被引：71

作者：

Song, J ^{[1
]}

Leem, DS

Kwak, JS

Nam, OH

Park, Y

Seong, TY

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 06期

关键词：

flip-chip light-emitting diode (LED); GaN; indium oxide; ohmic contacts;

D O I：

10.1109/LPT.2004.827096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated an Mg-doped InxOy (MIO)-Ag scheme for the formation of high-quality ohmic contacts to p-type GaN for flip-chip light-emitting diodes, (LEDs). The as-deposited sample shows nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at temperatures of 330 degreesC-530 degreesC for 1 min in air ambient results in linear I-V behaviors, producing specific contact resistances of 10(-4)-10(-5) Omega . cm(2). In addition, blue LEDs fabricated with the MIO-Ag contact layers give forward-bias voltages of 3.13-3.15 V at an injection current of 20 mA. It is further shown that LEDs made with the MIO-Ag contact layers give higher output power compared with that with the Ag contact layer. This result strongly. indicates that the MIO-Ag can be a promising scheme for the realization of high brightness LEDs for solid-state lighting application.

引用

页码：1450 / 1452

页数：3

共 17 条

[1] Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag [J].

Hibbard, DL ;

Jung, SP ;

Wang, C ;

Ullery, D ;

Zhao, YS ;

Lee, HP ;

So, W ;

Liu, H .

APPLIED PHYSICS LETTERS, 2003, 83 (02) :311-313

[2] Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Shih, KK ;

Chen, LC ;

Chen, FR ;

Kai, JJ .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4491-4497

[3] Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment [J].

Jang, JS ;

Park, SJ ;

Seong, TY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :2667-2670

[4] Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN [J].

Jang, JS ;

Chang, IS ;

Kim, HK ;

Seong, TY ;

Lee, SH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 1999, 74 (01) :70-72

[5] Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN [J].

Jang, JS ;

Park, SJ ;

Seong, TY .

APPLIED PHYSICS LETTERS, 2000, 76 (20) :2898-2900

[6]

Khan MA, 1996, APPL PHYS LETT, V68, P3022, DOI 10.1063/1.116684

[7] Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate [J].

Kwak, JS ;

Lee, KY ;

Han, JY ;

Cho, J ;

Chae, S ;

Nam, OH ;

Park, Y .

APPLIED PHYSICS LETTERS, 2001, 79 (20) :3254-3256

[8] Low-resistance ohmic contacts to p-type GaN [J].

Li, YL ;

Schubert, EF ;

Graff, JW ;

Osinsky, A ;

Schaff, WF .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2728-2730

[9] Effects of NiO on electrical properties of NiAu-based ohmic contacts for p-type GaN [J].

Maeda, T ;

Koide, Y ;

Murakami, M .

APPLIED PHYSICS LETTERS, 1999, 75 (26) :4145-4147

[10] THE EFFECTS OF CONTACT SIZE AND NON-ZERO METAL RESISTANCE ON THE DETERMINATION OF SPECIFIC CONTACT RESISTANCE [J].

MARLOW, GS ;

DAS, MB .

SOLID-STATE ELECTRONICS, 1982, 25 (02) :91-94

← 1 2 →