Orientation-dependent Ga surface diffusion in molecular beam epitaxy of GaAs on GaAs patterned substrates

被引：63

作者：

Takebe, T ^{[1
]}

Fujii, M ^{[1
]}

Yamamoto, T ^{[1
]}

Fujita, K ^{[1
]}

Watanabe, T ^{[1
]}

机构：

[1] ATR,OPT & RADIO COMMUN RES LABS,SEIKA,KYOTO 61902,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 11期

关键词：

D O I：

10.1063/1.365548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Generation of extra facets on ridge-type triangles with (001)-, (110)-, and (201)-related equivalent slopes on GaAs (111) A substrates and stripes running in the [(1) over bar 10], [110], and [100] directions on (001) substrates during molecular beam epitaxy of GaAs/AlGaAs multilayers was investigated. By investigating local variation in layer thickness in the regions adjacent to extra (114)A, (110), and ((111) over bar)B facets common to the (111)A and (001) patterned substrates and extra facets specific to the respective substrates and growth rates of the facets relative to the growth rate on the substrate plane, the orientation-dependent Ga surface diffusion length, lambda(Ga), was elucidated as lambda(Ga)(001)approximate to lambda(Ga)((113) over bar)B<{lambda(Ga)((111) over bar)B, lambda(Ga)((331) over bar)B, lambda(Ga)(013), lambda(Ga)(113)A}<lambda Ga(159)approximate to lambda(Ga)(114)A approximate to lambda(Ga)(111)A<lambda(Ga)(110). That is, lambda(Ga) increases in the order of the (001), (111)B-related, (111)A-related, and (110) surfaces.

引用

页码：7273 / 7281

页数：9

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