Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors

被引：56

作者：

Fioretti, Angela N. ^{[1
,2
]}

Stokes, Adam ^{[1
,2
]}

Young, Matthew R. ^{[1
]}

Gorman, Brian ^{[2
]}

Toberer, Eric S. ^{[1
,2
]}

Tamboli, Adele C. ^{[1
,2
]}

Zakutayev, Andriy ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Colorado Sch Mines, Golden, CO 80401 USA

来源：

ADVANCED ELECTRONIC MATERIALS | 2017年 / 3卷 / 03期

关键词：

annealing; hydrogen; nitride; photovoltaics; semiconductor; ELECTRON-BEAM IRRADIATION; LIGHT-EMITTING-DIODES; P-TYPE GAN; ENERGY; COMPENSATION; TRANSPORT; INSIGHTS; ZNSNN2; FILMS;

D O I：

10.1002/aelm.201600544

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

[No abstract available]

引用

页数：5

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