Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

被引：389

作者：

DenBaars, Steven P. ^{[1
]}

Feezell, Daniel ^{[1
]}

Kelchner, Katheryn ^{[1
]}

Pimputkar, Siddha ^{[1
]}

Pan, Chi-Chen ^{[1
]}

Yen, Chia-Chen ^{[1
]}

Tanaka, Shinichi ^{[1
]}

Zhao, Yuji ^{[1
]}

Pfaff, Nathan ^{[1
]}

Farrell, Robert ^{[1
]}

Iza, Mike ^{[1
]}

Keller, Stacia ^{[1
]}

Mishra, Umesh ^{[1
]}

Speck, James S. ^{[1
]}

Nakamura, Shuji ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Solid State Lighting & Energy Ctr, Dept Mat, Santa Barbara, CA 93106 USA

来源：

ACTA MATERIALIA | 2013年 / 61卷 / 03期

基金：

美国国家科学基金会;

关键词：

GaN; LEDs; Laser diodes; Solid-state lighting; M-PLANE; PHASE-SEPARATION; NONPOLAR; POLARIZATION; FIELDS;

D O I：

10.1016/j.actamat.2012.10.042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Light-emitting diodes (LEDs) fabricated from gallium nitride (GaN) have led to the realization of high-efficiency white solid-state lighting. Currently, GaN white LEDs exhibit luminous efficacy greater than 150 lm W-1, and external quantum efficiencies higher than 60%. This has enabled LEDs to compete with traditional lighting technologies, such as incandescent and compact fluorescent (CFL) lighting. Further improvements in materials quality and cost reduction are necessary for widespread adoption of LEDs for lighting. A review of the unique polarization anisotropy in GaN is included for the different crystal orientations. The emphasis on nonpolar and semipolar LEDs highlights high-power violet and blue emitters, and we consider the effects of indium incorporation and well width. Semipolar GaN materials have enabled the development of high-efficiency LEDs in the blue region and recent achievements of green laser diodes at 520 nm. (C) 2012 Published by Elsevier Ltd. on behalf of Acta Materialia Inc.

引用

页码：945 / 951

页数：7

共 29 条

[1] Low Threshold Current Density InGaN Based 520-530nm Green Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates [J].

Adachi, Masahiro ;

Yoshizumi, Yusuke ;

Enya, Yohei ;

Kyono, Takashi ;

Sumitomo, Takamichi ;

Tokuyama, Shinji ;

Takagi, Shinpei ;

Sumiyoshi, Kazuhide ;

Saga, Nobuhiro ;

Ikegami, Takatoshi ;

Ueno, Masaki ;

Katayama, Koji ;

Nakamura, Takao .

APPLIED PHYSICS EXPRESS, 2010, 3 (12)

[2]

Akasaki I., 1992, I PHYS C SER, V129, P851

[3] A nearly ideal phosphor-converted white light-emitting diode [J].

Allen, Steven C. ;

Steckl, Andrew J. .

APPLIED PHYSICS LETTERS, 2008, 92 (14)

[4] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[5] Exciton localization in InGaN quantum well devices [J].

Chichibu, S ;

Sota, T ;

Wada, K ;

Nakamura, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2204-2214

[6] BLUE LEDS, UV PHOTODIODES AND HIGH-TEMPERATURE RECTIFIERS IN 6H-SIC [J].

EDMOND, JA ;

KONG, HS ;

CARTER, CH .

PHYSICA B-CONDENSED MATTER, 1993, 185 (1-4) :453-460

[7] Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode [J].

Erchak, AA ;

Ripin, DJ ;

Fan, S ;

Rakich, P ;

Joannopoulos, JD ;

Ippen, EP ;

Petrich, GS ;

Kolodziejski, LA .

APPLIED PHYSICS LETTERS, 2001, 78 (05) :563-565

[8] Effects of macroscopic polarization in III-V nitride multiple quantum wells [J].

Fiorentini, V ;

Bernardini, F ;

Della Sala, F ;

Di Carlo, A ;

Lugli, P .

PHYSICAL REVIEW B, 1999, 60 (12) :8849-8858

[9] Cone-shaped surface GaN-based light-emitting diodes [J].

Fujii, T ;

David, A ;

Gao, Y ;

Iza, M ;

DenBaars, SP ;

Hu, EL ;

Weisbuch, C ;

Nakamura, S .

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07) :2836-2840

[10] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

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