Cone-shaped surface GaN-based light-emitting diodes

被引：37

作者：

Fujii, T ^{[1
]}

David, A ^{[1
]}

Gao, Y ^{[1
]}

Iza, M ^{[1
]}

DenBaars, SP ^{[1
]}

Hu, EL ^{[1
]}

Weisbuch, C ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, UCSB Grp, NICP, ERATO, Santa Barbara, CA 93106 USA

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461494

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Our technical approach for high light extraction is forming well-defined cone-like structures without any deterioration of the light-emitting diode (LED) surface. The laser lift off (LLO) technique combined with photo electrochemical etching (PEC) allows for the development of a high light extraction structure. The extraction efficiency enhancement produced a four-fold increase for an unencapuslated chip compared with a conventionally processed LED.

引用

页码：2836 / 2840

页数：5

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