Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer

被引：84

作者：

Huh, C ^{[1
]}

Lee, JM ^{[1
]}

Kim, DJ ^{[1
]}

Park, SJ ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Nanophoton Semicond Lab, Kwangju 500712, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 05期

关键词：

D O I：

10.1063/1.1497467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication and characterization of an InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) with a SiO2 current blocking layer inserted beneath the p-pad electrode is described. The light-output power and external quantum efficiency for the InGaN/GaN MQW LED chip with a current blocking layer were significantly increased compared to those for the conventional InGaN/GaN MQW LED chip. The increase in the light-output power can be attributed to the injection of additional current into the light-emitting quantum well layer of the LED by the SiO2 current blocking layer and a reduction in parasitic optical absorption in the p-pad electrode. (C) 2002 American Institute of Physics.

引用

页码：2248 / 2250

页数：3

共 12 条

[1] InGaN blue light-emitting diodes with optimized n-GaN layer [J].