Surface morphology dynamics in strained epitaxial InGaAs

被引：23

作者：

Pinnington, T ^{[1
]}

Lavoie, C ^{[1
]}

Tiedje, T ^{[1
]}

Haveman, B ^{[1
]}

Nodwell, E ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER,BC V6T 1Z4,CANADA

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.79.1698

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Elastic light scattering has been used to measure the time evolution of the power spectrum of the surface morphology of strained InGaAs layers during growth. From a combination of fixed scattering angle measurements during growth and variable scattering angle measurements after growth, we are able to determine both the time and spatial frequency dependence of the power spectral density during relaxation of the strained films via misfit dislocations. The data are fit with an Edwards-Wilkinson model, for which the surface morphology is driven by inhomogeneous surface strains.

引用

页码：1698 / 1701

页数：4

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