Artifacts in ballistic magnetoresistance measurements (invited)

被引：63

作者：

Egelhoff, WF ^{[1
]}

Gan, L

Ettedgui, H

Kadmon, Y

Powell, CJ

Chen, PJ

Shapiro, AJ

McMichael, RD

Mallett, JJ

Moffat, TP

Stiles, MD

Svedberg, EB

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Seagate Technol, Pittsburgh, PA 15203 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 11期

关键词：

D O I：

10.1063/1.1688533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have carried out an extensive search for credible evidence to support the existence of a ballistic magnetoresistance (BMR) effect in magnetic nanocontacts. We have investigated both thin-film and thin-wire geometries for both mechanically formed and electrodeposited nanocontacts. We find no systematic differences between mechanically formed and electrodeposited nanocontacts. The samples we have investigated include mechanical contacts between ferromagnetic wires, electrodeposited nanocontacts between ferromagnetic wires, ferromagnetic nanocontacts electrodeposited on Cu wires, nanocontacts electrodeposited between ferromagnetic films anchored on wafers, ferromagnetic nanocontacts electrodeposited on Cu films anchored on wafers, nanocontacts between two ferromagnetic films connected by a pinhole through an insulating film, and nanocontacts formed by focused ion-beam etching. In none of these samples did we find credible evidence for a BMR effect. However, we did find a number of artifacts due to magnetostrictive, magnetostatic, and magnetomechanical effects that can mimic BMR. (C) 2004 American Institute of Physics.

引用

页码：7554 / 7559

页数：6

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