Characterization of boron carbon nitride films with a low dielectric constant

被引：31

作者：

Etou, Y ^{[1
]}

Tai, T ^{[1
]}

Sugiyama, T ^{[1
]}

Sugino, T ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

关键词：

boron carbon nitride; dielectric constant; plasma-assisted chemical vapor deposition; X-ray photoelectron spectroscopy; transmission electron microscopy; transmission electron diffraction;

D O I：

10.1016/S0925-9635(01)00593-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline boron carbon nitride (BCN) films were synthesized at various temperatures by plasma-assisted chemical vapor deposition. X-Ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and transmission electron diffraction (TED) measurements were carried out to characterize the BCN films. Incorporation of C atoms increased with decreasing growth temperature. Moreover, a reduction in the crystal grain size and an increase of the amorphous region of the BCN film occurred with decreasing growth temperature. A variation in the dielectric constant of the BCN film was related to the C composition and film structure. A dielectric constant as low as 2.4 was achieved for the BCN film. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：985 / 988

页数：4

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