GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis

被引：23

作者：

Hirako, A

Yoshitani, M

Nishibayashi, M

Nishikawa, Y

Ohkawa, K

机构：

[1] Sci Univ Tokyo, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan

[2] Japan Sci & Technol Corp, Exploratory Res Adv Technol, Gonokami Cooperat Excitat Project, Shinjuku Ku, Tokyo 1628601, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

关键词：

computer simulation; metalorganic vapor phase epitaxy; nitrides; semiconducting; III-V materials;

D O I：

10.1016/S0022-0248(01)01999-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied microscopic chemistry of gaseous phase in GaN growth by computational thermodynamic analysis of metalorganic vapor phase epitaxy with two- and three-flow methods. Correlations between quality of GaN layers and gaseous phase chemistry were found from the computational analysis. It was confirmed that laminar flow, on a substrate during growth was necessary to obtain a high-quality GaN layer in spite of high growth temperature. Optimum decomposed-species V/III ratio (NH2/GaCH3) were considered in the range of 1000-2000 to achieve high electron mobility more than 200 cm(2)/V s. Two-flow method was easier to achieve the optimum condition than three-flow method both in experiments and in computational analysis. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：931 / 935

页数：5