Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy

被引：14

作者：

Kaneta, Akio ^{[1
]}

Funato, Mitsuru ^{[1
]}

Narukawa, Yukio ^{[2
]}

Mukai, Takashi ^{[2
]}

Kawakami, Yoichi ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Katsura Campus, Kyoto 6158510, Japan

[2] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

基金：

日本学术振兴会;

关键词：

D O I：

10.1002/pssc.200565403

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We performed near-field photoluminescence (PL) mapping and atomic force microscopy at the same scanning area to clarify relationship between luminescence dynamics and threading dislocations in violet and blue light emitting InGaN single-quantum-well structures on epitaxially laterally overgrown GaN templates at room temperature. Clear correlation has been found between the distribution of dark area in PL mapping data and threading dislocations with screw and mixed types in the violet sample. On the other hand, such correlation has not been found in the blue sample. These results indicated that the carriers/excitons are captured easily in nonradiative recombination centers (NRCs) originating from the threading dislocations in the violet sample, because the lateral diffusion length of carriers/excitons is large due to a small potential fluctuation induced by compositional fluctuation of In comparing to those in the blue sample. However, the capture to such NRCs is hindered effectively in the blue one because of the localization to potential minima. (c) 2006 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1897 / 1901

页数：5

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