Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy

被引:14
作者
Kaneta, Akio [1 ]
Funato, Mitsuru [1 ]
Narukawa, Yukio [2 ]
Mukai, Takashi [2 ]
Kawakami, Yoichi [1 ]
机构
[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Katsura Campus, Kyoto 6158510, Japan
[2] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan
来源
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期
基金
日本学术振兴会;
关键词
D O I
10.1002/pssc.200565403
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We performed near-field photoluminescence (PL) mapping and atomic force microscopy at the same scanning area to clarify relationship between luminescence dynamics and threading dislocations in violet and blue light emitting InGaN single-quantum-well structures on epitaxially laterally overgrown GaN templates at room temperature. Clear correlation has been found between the distribution of dark area in PL mapping data and threading dislocations with screw and mixed types in the violet sample. On the other hand, such correlation has not been found in the blue sample. These results indicated that the carriers/excitons are captured easily in nonradiative recombination centers (NRCs) originating from the threading dislocations in the violet sample, because the lateral diffusion length of carriers/excitons is large due to a small potential fluctuation induced by compositional fluctuation of In comparing to those in the blue sample. However, the capture to such NRCs is hindered effectively in the blue one because of the localization to potential minima. (c) 2006 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1897 / 1901
页数:5
相关论文
共 11 条
[1]   Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].
Chichibu, S ;
Azuhata, T ;
Sota, T ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190
[2]   Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques [J].
Chichibu, SF ;
Uedono, A ;
Onuma, T ;
Sota, T ;
Haskell, BA ;
DenBaars, SP ;
Speck, JS ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 2005, 86 (02) :021914-1
[3]   Characterization of threading dislocations in GaN epitaxial layers [J].
Hino, T ;
Tomiya, S ;
Miyajima, T ;
Yanashima, K ;
Hashimoto, S ;
Ikeda, M .
APPLIED PHYSICS LETTERS, 2000, 76 (23) :3421-3423
[4]   Spatial and temporal luminescence dynamics in an InxGa1-xN single quantum well probed by near-field optical microscopy [J].
Kaneta, A ;
Okamoto, K ;
Kawakami, Y ;
Fujita, S ;
Marutsuki, G ;
Narukawa, Y ;
Mukai, T .
APPLIED PHYSICS LETTERS, 2002, 81 (23) :4353-4355
[5]   STRUCTURAL EVOLUTION IN EPITAXIAL METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN FILMS ON SAPPHIRE [J].
KAPOLNEK, D ;
WU, XH ;
HEYING, B ;
KELLER, S ;
KELLER, BP ;
MISHRA, UK ;
DENBAARS, SP ;
SPECK, JS .
APPLIED PHYSICS LETTERS, 1995, 67 (11) :1541-1543
[6]   Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown on epitaxially laterally overgrown GaN substrates [J].
Mukai, T ;
Nakamura, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (10) :5735-5739
[7]   InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices [J].
Nakamura, S ;
Senoh, M ;
Nagahama, S ;
Iwasa, N ;
Yamada, T ;
Matsushita, T ;
Kiyoku, H ;
Sugimoto, Y ;
Kozaki, T ;
Umemoto, H ;
Sano, M ;
Chocho, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A) :L1568-L1571
[8]   Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm [J].
Narukawa, Y ;
Kawakami, Y ;
Funato, M ;
Fujita, S ;
Fujita, S ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 1997, 70 (08) :981-983
[9]   Recombination dynamics of localized excitons in In0.20Ga0.80N-In0.05Ga0.95 multiple quantum wells [J].
Narukawa, Y ;
Kawakami, Y ;
Fujita, S ;
Fujita, S ;
Nakamura, S .
PHYSICAL REVIEW B, 1997, 55 (04) :R1938-R1941
[10]   Low temperature near-field photoluminescence spectroscopy of InGaAs single quantum dots [J].
Saiki, T ;
Nishi, K ;
Ohtsu, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B) :1638-1642