A Novel Method to Fabricate Silicon Nanowire p-n Junctions by a Combination of Ion Implantation and in-situ Doping

被引：15

作者：

Das Kanungo, Pratyush ^{[1
]}

Koegler, Reinhard ^{[2
]}

Werner, Peter ^{[1
]}

Goesele, Ulrich ^{[1
]}

Skorupa, Wolfgang ^{[2
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[2] Forschungszentrum Dresden, FWIM, D-01314 Dresden, Germany

来源：

NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 01期

关键词：

Nanowire; p-n Junction; Ion implantation; In-situ doping; Electrical properties; SINGLE; CODIFFUSION; DEVICES; BORON;

D O I：

10.1007/s11671-009-9472-x

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate a novel method to fabricate an axial p-n junction inside < 111 > oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration similar to 10(18) cm(-3)), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 x 10(19) cm(-3). Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.

引用

页码：243 / 246

页数：4

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