Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation

被引：10

作者：

Das Kanungo, Pratyush ^{[1
]}

Koegler, Reinhard ^{[2
]}

Nguyen-Duc, Kien ^{[1
]}

Zakharov, Nikolai ^{[1
]}

Werner, Peter ^{[1
]}

Goesele, Ulrich ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[2] Forschungszentrum Dresden Rossendorf, FWIM, D-01314 Dresden, Germany

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 16期

关键词：

ELECTRONIC DEVICES; DIFFUSION; TRANSPORT;

D O I：

10.1088/0957-4484/20/16/165706

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Vertical epitaxial short (200-300 nm long) silicon nanowires (Si NWs) grown by molecular beam epitaxy on Si(111) substrates were separately doped p- and n-type ex situ by implanting with B, P and As ions respectively at room temperature. Multi-energy implantations were used for each case, with fluences of the order of 10(13)-10(14) cm (2), and the NWs were subsequently annealed by rapid thermal annealing (RTA). Transmission electron microscopy showed no residual defect in the volume of the NWs. Electrical measurements of single NWs with a Pt/Ir tip inside a scanning electron microscope (SEM) showed significant increase of electrical conductivity of the implanted NWs compared to that of a nominally undoped NW. The p-type, i. e. B-implanted, NWs showed the conductivity expected from the intended doping level. However, the n-type NWs, i. e. P -and As-implanted ones, showed one to two orders of magnitude lower conductivity. We think that a stronger surface depletion is mainly responsible for this behavior of the n-type NWs.

引用

页数：7

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