Growth of single phase GaAs1-xNx with high nitrogen concentration by metal-organic molecular beam epitaxy

被引：52

作者：

Qiu, Y ^{[1
]}

Nikishin, SA ^{[1
]}

Temkin, H ^{[1
]}

Faleev, NN ^{[1
]}

Kudriavtsev, YA ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 24期

关键词：

D O I：

10.1063/1.119137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality layers of GaAs1-xNx were grown on (001)GaAs by metal-organic molecular beam epitaxy. The growth conditions, and especially the nitrogen to arsenic flux ratio, were carefully explored to assure epitaxial crystal growth. We show well behaved and reproducible growth of single phase GaAs1-xNx with the GaN mole fraction as high as x = 0.10. The nitrogen content of epitaxial layers was determined directly by secondary ion mass spectroscopy and high resolution x-ray diffraction. (C) 1997 American Institute of Physics.

引用

页码：3242 / 3244

页数：3

共 14 条

[11] BAND-GAP ENERGY AND BAND LINEUP OF III-V-ALLOY SEMICONDUCTORS INCORPORATING NITROGEN AND BORON
SAKAI, S
UETA, Y
TERAUCHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (10): : 4413 - 4417
[12] Giant and composition-dependent optical bowing coefficient in GaAsN alloys
Wei, SH
Zunger, A
[J]. PHYSICAL REVIEW LETTERS, 1996, 76 (04) : 664 - 667
[13] RED SHIFT OF PHOTOLUMINESCENCE AND ABSORPTION IN DILUTE GAASN ALLOY LAYERS
WEYERS, M
SATO, M
ANDO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A): : L853 - L855
[14] GROWTH OF GAASN ALLOYS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING PLASMA-CRACKED NH3
WEYERS, M
SATO, M
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (12) : 1396 - 1398

← 1 2 →