Tunneling through a single quench-condensed cluster

被引:19
作者
Kubatkin, SE [1 ]
Danilov, AV [1 ]
Olin, H [1 ]
Claeson, T [1 ]
机构
[1] Chalmers Univ Technol, MINA, S-41296 Gothenburg, Sweden
关键词
D O I
10.1023/A:1004629630942
中图分类号
O59 [应用物理学];
学科分类号
摘要
Quench-condensed bismuth films of 3-5 nm thickness have been used as a cluster source to prepare Single Electron Transistors (SET) based on a single cluster with high charging energy. We used electron-beam defined shadow evaporation masks to pattern la nm wide constrictions in these films. By incremental depositions through these masks controlled by in situ sample conductance measurements, we obtained a SET geometry for clusters with, charging energies up to 90 meV Our experiment showed that the SET geometry can be achieved in every sample preparation ran, despite the apparent random nature of cluster formation in granular films. The resulting charging energy of the transistor varied from experiment to experiment. As value, however, was always higher than 10 meV.
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收藏
页码:307 / 316
页数:10
相关论文
共 20 条
[11]   Thickness dependence of the morphology of ultrathin quench condensed gold films [J].
Ekinci, KL ;
Valles, JM .
PHYSICAL REVIEW B, 1998, 58 (11) :7347-7350
[12]   Morphology of quench condensed Pb films near the insulator to metal transition [J].
Ekinci, KL ;
Valles, JM .
PHYSICAL REVIEW LETTERS, 1999, 82 (07) :1518-1521
[13]   ONSET OF SUPERCONDUCTIVITY IN THE TWO-DIMENSIONAL LIMIT [J].
HAVILAND, DB ;
LIU, Y ;
GOLDMAN, AM .
PHYSICAL REVIEW LETTERS, 1989, 62 (18) :2180-2183
[14]   Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate [J].
Ishikuro, H ;
Fujii, T ;
Saraya, T ;
Hashiguchi, G ;
Hiramoto, T ;
Ikoma, T .
APPLIED PHYSICS LETTERS, 1996, 68 (25) :3585-3587
[15]   A single-electron transistor made from a cadmium selenide nanocrystal [J].
Klein, DL ;
Roth, R ;
Lim, AKL ;
Alivisatos, AP ;
McEuen, PL .
NATURE, 1997, 389 (6652) :699-701
[16]   Coulomb blockade effects at room temperature in thin-film nanoconstrictions fabricated by a novel technique [J].
Kubatkin, SE ;
Danilov, AV ;
Bogdanov, AL ;
Olin, H ;
Claeson, T .
APPLIED PHYSICS LETTERS, 1998, 73 (24) :3604-3606
[17]   OBSERVATION OF QUANTUM EFFECTS AND COULOMB-BLOCKADE IN SILICON QUANTUM-DOT TRANSISTORS AT TEMPERATURES OVER 100 K [J].
LEOBANDUNG, E ;
GUO, LJ ;
WANG, Y ;
CHOU, SY .
APPLIED PHYSICS LETTERS, 1995, 67 (07) :938-940
[18]  
Persson SHM, 1999, APPL PHYS LETT, V74, P2546, DOI 10.1063/1.123893
[19]  
Ralph J, 1997, NEW YORK HIST, V78, P87
[20]   Superconducting thin films [J].
Shalnikov, A .
NATURE, 1938, 142 :74-74